RB051M-2YTR Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB051M-2Y
Applications
General rectification
Dimensions(Unit : mm)
Features
1)Small power mold type.（PMDU）
2)Ultra Low V_F
3)High reliability
Construction
Silicon epitaxial planer
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
Land size figure(Unit : mm)
1.2
PMDU
Structure
0.25±0.05
1.81±0.1
4.0±0.1
φ1.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
V_RM
Reverse voltage (DC)
V_R
Average rectified forward current(*1)
Io
Forward current surge peak （60Hz・1cyc）
I_FSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on alumina board. Tc=95C　Max.
Limits
20
20
3
30
125
-40 to +125
1.5MAX
Unit
V
V
A
A
C
C
Electrical characteristics(Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F
-
- 0.46
I_R
-
-
0.9
Unit
Conditions
V
I_F=3A
mA V_R=20V
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2011.05 - Rev.C