RB051LA-40TR Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB051LA-40
RB051LA-40
zApplications
General rectification
zFeatures
1) Small and Thin power
type (PMDT)
2) High reliability.
3) Low IR
zExternal dimensions (Unit : mm)
㪚㪘㪫㪟㪦㪛㪜㩷㪤㪘㪩㪢
㪈㪅㪌㫧㪇㪅㪉
zLand size figure (Unit : mm)
㪇㪅㪉㫧㪇㪅㪈㪌
㪇㪅㪈
㪉㪅㪇
mold
zStructure
Silicon epitaxial planar
㪉㪅㪍㫧㪇㪅㪉
㪩㪦㪟㪤㩷㪑㩷㪧㪤㪛䌔
㪇㪅㪐㪌㫧㪇㪅㪈
zTaping dimensions (Unit : mm)
㪉㪅㪇㫧㪇㪅㪇㪌
㪋㪅㪇㫧㪇㪅㪈
㪧㪤㪛䌔
zStructure
㱢㪈㪅㪌㪌㫧㪇㪅㪈
䇭䇭䇭䇭䇭㩷㩷㪇
㪇㪅㪉㪌㫧㪇㪅㪇㪌
㪉㪅㪎㫧㪇㪅㪈
㪋㪅㪇㫧㪇㪅㪈
㱢㪈㪅㪌㪌㫧㪇㪅㪈
䇭䇭䇭䇭䇭㩷㩷㪇
㪈㪅㪉㪌㫧㪇㪅㪈
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current (*1)
Io
3.0
A
Forward current surge peak 䋨60Hz䊶1cyc䋩
I_FSM
70
A
Junction temperature
Tj
125
㷄
Storage temperature
Tstg
-40 to +125
㷄
(*1) Alumina substrate at the time of assemble, TL=90ͨ max.
zElectrical characteristic (Ta=25qC)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F1
-
- 0.35
V_F2
-
- 0.45
I_R1
-
-
1
I_R2
-
-
150
Unit
Conditions
V
I_F=1A
V
I_F=3A
mA V_R=20V
μA
V_R=15V
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