RB051LA-40 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB051LA-40
RB051LA-40
zApplications
General rectification
zFeatures
1) Small and Thin power
type (PMDT)
2) High reliability.
3) Low IR
zExternal dimensions (Unit : mm)
CATHODE MARK
1.5±0.2
zLand size figure (Unit : mm)
0.2±0.15
0.1
2.0
mold
zStructure
Silicon epitaxial planar
2.6±0.2
ROHM : PMDï¼´
0.95±0.1
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDï¼´
zStructure
φ1.55±0.1
　　　　　 0
0.25±0.05
2.7±0.1
4.0±0.1
φ1.55±0.1
　　　　　 0
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
20
V
Average rectified forward current (*1)
Io
3.0
A
Forward current surge peak （60Hz・1cyc）
I_FSM
70
A
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
(*1) Alumina substrate at the time of assemble, TL=90℃ max.
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F1
-
- 0.35
V_F2
-
- 0.45
I_R1
-
-
1
I_R2
-
-
150
Unit
Conditions
V
I_F=1A
V
I_F=3A
mA V_R=20V
µA
V_R=15V
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