RB051L-40_11 Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Data Sheet
Schottky Barrier Diode
RB051L-40
Applications
General rectification
Features
1)Small power mold type.（PMDS）
2)Low VF
3)High reliability
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
31
①②
0.1±0.02
　　　 0.1
1.5±0.2
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55 ±0.05
0.3
2.9±0.1
4.0±0 .1
φ1.55
2 .8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
20
V
Average rectified forwarfd current
Io
3
A
Forward current surge peak （60Hz・1cyc） I_FSM
70
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1) Mounted on epoxyboard. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
V_F1
-
-
0.35
V_F2
-
-
0.45
I_R1
-
-
1
I_R2
-
-
150
Unit
Conditions
V
I_F=1.0A
V
I_F=3.0A
mA
V_R=20V
μA
V_R=15V
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2011.04 - Rev.B