RB051L-40_1 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB051L-40
RB051L-40
zApplications
General rectification
z Dimensions (Unit : mm)
zFeatures
1) Small power mold type. (PMDS)
2) Low I_R.
3) High reliability.
2.6±0.2
31
①②
0.1±0.02
　　　 0.1
z Land size figure (Unit : mm)
2.0
zConstruction
Silicon epitaxial planar
1.5±0.2
2.0±0.2
PMDS
zStructure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
z Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forwarfd current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
(*1) Mounted on epoxyboard. 180°Half sine wave
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F1
-
-
0.35
V_F2
-
-
0.45
I_R1
-
-
1
I_R2
-
-
150
Limits
Unit
40
V
20
V
3
A
70
A
125
℃
-40 to +125
℃
Unit
Conditions
V
I_F=1.0A
V
I_F=3.0A
mA V_R=20V
µA
V_R=15V
Rev.B
1/3