RB050LA-30TR Datasheet, PDF (1/4 Pages) Rohm – Schottky Barrier Diode

Schottky Barrier Diode
RB050LA-30
●Applications
General rectification
●Dimensions (Unit : mm)
2.6±0.2
0.2±0.15
　　　 0.1
●Land size figure(Unit : mm)
2.0
●Features
1)Small and thin power mold type.(PMDT)
2)Low IR
3)High reliability
●Construction
Silicon epitaxial planar
PMDï¼´
1.5±0.2
ROHM : PMDï¼´
① Manufacture Date
0.95±0.1
●Structure
●Taping specifications（Unit : mm）
2.0±0.05
4.0±0.1
φ1.55±0.1
　　　　　 0
0.25±0.05
2.7±0.1
4.0±0.1
φ1.55±0.1
　　　　　 0
1.25±0.1
●Absolute maximum ratings（Ta=25℃）
Parameter
Symbol
Limits
Reverse voltage (repetitive)
V_RM
30
Reverse voltage (DC)
V_R
30
Average rectified forward current (*1)
Io
3
Forward current surge peak （60Hz・1cyc）
Junction temperature
I_FSM
Tj
70
150
Storage temperature
Tstg
-55 to +150
(*1)Tc=105℃max Mounting on epoxi board. 180°Half sine wave
●Electrical characteristics （Ta=25℃）
Parameter
Forward voltage
Reverse current
Symbol
V_F
I_R
Min.
-
-
Typ.
-
-
Max.
0.45
150
Unit
V
V
A
A
℃
℃
Unit
Conditions
V
I_F=3.0A
µA
V_R=30V
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2009.02 - Rev.B