RB050LA-30 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB050LA-30
RB050LA-30
zApplications
General rectification
zFeatures
1) Small and Thin power mold
type (PMDT)
2) Low IR
3) High reliability
zStructure
Silicon Epitaxial Planer
zExternal dimensions (Unit : mm)
2.6±0.1
0.19
zLand size figure
2.0
1.5±0.1
0～0.1
0.95±0.1
ROHM : PMDï¼´
① Manufacture date
0.2 ^0.3
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
8.0±0.1
PMDï¼´
zStructure
φ1.55±0.1
　　　　　 0
0.25±0.05
2.8±0.05
8.0±0.1
φ1.55±0.05
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Rever voltage (repetitive peak)
V_RM
30
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current *
Io
3
A
Forward cirremt surge peak (60Hz・1cyc)
I_FSM
70
A
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
(*1)Tc=90℃max Mounted on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V_F
-
Reverse current
I_R
-
-
0.45
V I_F=3.0A
-
150
µA V_R=30V
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