RB050L-60TE25 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB050L-60
Applications
General rectification
Dimensions (Unit : mm)
2.6±0.2
Data Sheet
Land size figure (Unit : mm)
2.0
Features
1)Small power mold type. (PMDS)
2)Low I_R
3)High reliability
Construction
Silicon epitaxial planar
43
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
  _{Manufacture Date}
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
V_RM
60
V
Reverse voltage (DC)
V_R
60
V
Average rectified forward current (*1)
Io
3
A
Average rectified forward current (*2)
Io
2
A
Forward current surge peak (60Hz・1cyc)
I_FSM
70
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
40 to 150
°C
(*1) On the Glass epoxy substrate, half sine wave at 180° Tc=69°C MAX
(*2) On the Glass epoxy substrate, half sine wave at 180°
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
V_F1
-
V_F2
-
-
0.52
-
0.56
Reverse current
I_R
-
-
100
Unit Conditions
V
I_F=2.0A
V
I_F=3.0A
A
V_R=60V
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2011.04 - Rev.A