RB050L-60 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Schottky barrier diode
RB050L-60
zApplications
General rectification
zDimensions (Unit : mm)
2.6±0.2
zLand size figure (Unit : mm)
2.0
zFeatures
1)Small power mold type. (PMDS)
2)Low I_R
3)High reliability
zConstruction
Silicon epitaxial planar
43
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
c 2 _{Manufacture Date}
PMDS
zStructure
zTaping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
V_RM
60
Reverse voltage (DC)
V_R
60
Average rectified forward current (*1)
Io
3
Average rectified forward current (*2)
Io
2
Forward current surge peak (60Hz・1cyc)
I_FSM
70
Junction temperature
Tj
150
Storage temperature
Tstg
-40to+150
(*1) On the Glass epoxy substrate, half sine wave at 180°Tc=69°C MAX
(*2) On the Glass epoxy substrate, half sine wave at 180°
φ1.55
2.8MAX
Unit
V
V
A
A
A
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
Forward voltage
V_F1
-
V_F2
-
-
0.52
-
0.56
Reverse current
I_R
-
-
100
Unit Conditions
V
I_F=2.0A
V
I_F=3.0A
µA
V_R=60V
www.rohm.com
©2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.06- Rev.A