RB050L-40_11 Datasheet, PDF (1/4 Pages) Rohm – Shottky barrier diode

Data Sheet
Shottky barrier diode
RB050L-40
Applications
General rectification
Features
1) Small power mold type. (PMDS)
2) Low IR
3) High reliability.
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
2.6±0.2
Land size figure (Unit : mm)
2.0
35
①②
1.5±0.2
0.1±0.02
　　　 0.1
2.0±0.2
PMDS
Structure
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacture Date
Taping specifications(Unit : mm)
2 .0 ±0.05
4 .0 ±0.1
φ1.55±0.05
0.3
2 .9 ±0.1
4 .0 ±0.1
φ1.55
2 .8MAX
Absolute maximum ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
40
V
Average rectified forward voltage
Io
3
A
Forward current surge peak (60Hz・1cyc)
I_FSM
70
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
40 to 125
°C
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
V_F1
-
-
0.55
V_F2
-
-
0.50
I_R
-
-
1
Unit
V
I_F=3.0A
V
I_F=1.5A
mA
V_R=40V
Conditions
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2011.04 - Rev.D