RB021VA-90 Datasheet, PDF (1/4 Pages) Rohm – Schottky barrier diode

Diodes
Schottky barrier diode
RB021VA-90
RB021VA-90
zApplications
General rectification
zFeatures
1) Small power mold type
(TUMD2)
2) Low VF
3) High reliability
zStructure
Silicon epitaxial planar
zExternal dimensions (Unit : mm)
1.3±0.05
0.17±0.1
　　 0.05
zLand size figure (Unit : mm)
1.1
0.8±0.05
ROHM : TUMD2
0.6±0.2
　　　 0.1
dot (year week factory) + day
zTaping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
　　　　　 0
TUMD2
zStructure
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
　　　　　0
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak(60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
V_RM
V_R
Io
I_FSM
Tj
Tstg
Limits
90
90
0.2
5
125
-40 to +125
0.9±0.08
Unit
V
V
A
A
℃
℃
zElectrical characteristic (Ta=25°C)
Parameter
Symbol Min.
Forward voltage
V_F
-
Reverse current
I_R
-
Typ.
-
-
Max.
0.49
900
Unit
Conditions
V I_F=200mA
µA V_R=90V
Rev.B
1/3