R8008ANJ Datasheet, PDF (1/14 Pages) Rohm – Nch 800V 8A Power MOSFET

R8008ANJ
Nch 800V 8A Power MOSFET
Datasheet
V_DSS
R_DS(on) (Max.)
I_D
P_D
800V
0.98W
8A
40W
lOutline
LPT(S)
(SC-83)
(2)
(1)
(3)
lFeatures
1) Low on-resistance.
lInner circuit
2) Fast switching speed.
3) Gate-source voltage (V_GSS) guaranteed to be 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
*1 BODY DIODE
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
Taping
Reel size (mm)
330
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
24
1,000
TL
Marking
R8008ANJ
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (T_c = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
T_c = 25°C
T_c = 100°C
V_DSS
I_D ^*1
I_D ^*1
I_D,pulse ^*2
V_GSS
E_AS ^*3
E_AR ^*4
I_AS*3
P_D
T_j
T_stg
dv/dt ^*5
800
8.0
4.3
32
30
4.2
3.4
4.0
40
150
-55 to +150
15
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
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2013.10 - Rev.A