R8001CND Datasheet, PDF (1/14 Pages) Rohm – Nch 800V 1A Power MOSFET

R8001CND
　　Nch 800V 1A Power MOSFET
　　 ^Datasheet
lOutline
V_DSS
800V
TO-252
　
R_DS(on)(Max.)
8.7Ω
SC-63
I_D
±1A
CPT3
P_D
36W
　
　　　　　　
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
R8001C
lAbsolute maximum ratings (T_a = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
V_DSS
800
V
Continuous drain current (T_c = 25°C)
I_D*1
±1
A
Pulsed drain current
I_DP*2
±4
A
Gate - Source voltage
V_GSS
±25
V
Avalanche current, single pulse
I_AS*3
0.5
A
Avalanche energy, single pulse
E_AS*3
0.066
mJ
Power dissipation (T_c = 25°C)
P_D
36
W
Junction temperature
T_j
150
℃
Operating junction and storage temperature range
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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