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R6046FNZ Datasheet, PDF (1/7 Pages) Rohm – 10V Drive Nch MOSFET | |||
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Data Sheet
10V Drive Nch MOSFET
R6046FNZ
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TO-3PF
15.5
Ï3.6
5.5 3.0
2.0
0.75
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
5.45 5.45
2.0 3.0
0.9
ï¬ Packaging specifications
Package
Bulk
Type Code
-
Basic ordering unit (pieces) 360
R6046FNZ
ï¡
ï¬ Inner circuit
â1
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
600
V
VGSS
ï±30
V
ID *3
ï±46
A
IDP *1
ï±115
A
IS *3
46
A
ISP *1
115
A
IAS *2
23
A
EAS *2
142
mJ
PD *4
120
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 L 500ïH, VDD=50V, RG=25ï, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
ï¬ Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.04
Unit
ï°C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ïª1 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
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