R6030MNX Datasheet, PDF (1/14 Pages) Rohm – Nch 600V 30A Power MOSFET

R6030MNX
　　Nch 600V 30A Power MOSFET
　　 ^Datasheet
lOutline
V_DSS
600V
　
R_DS(on)(Max.)
0.150Ω
I_D
±30A
TO-220FM
P_D
90W
　
　　　　　　
lInner circuit
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (V_GSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
500
Taping code
-
Marking
lAbsolute maximum ratings (T_a = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6030MNX
Unit
Drain - Source voltage
V_DSS
600
V
Continuous drain current (T_c = 25°C)
I_D*1
±30
A
Pulsed drain current
I_DP*2
±90
A
Gate - Source voltage
V_GSS
±30
V
Avalanche current, single pulse
I_AS
5.0
A
Avalanche energy, single pulse
E_AS
6.7
mJ
Power dissipation (T_c = 25°C)
P_D
90
W
Junction temperature
T_j
150
℃
Operating junction and storage temperature range
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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