R6025ANZ Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R6025ANZ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zPackaging specifications
Package
Type
Basic ordering unit (pieces)
R6025ANZ
Tube
360
zDimensions (Unit : mm)
TO-3PF
15.5
φ3.6
5.5 _3.0
2.0
0.75
(1)Gate
(2)Drain
(3)Souce
5.45 5.45
(1) (2) (3)
zInner circuit
2.0 _3.0
0.9
∗1
(1)
(2)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
Continuous
ID ^∗3
±25
A
Drain current
Pulsed
IDP ^∗1
±100
A
Source current
Continuous
IS ^∗3
25
A
(Body Diode)
Pulsed
ISP ^∗1
100
A
Avalanche current
IAS ^∗2
12.5
A
Avalanche energy
EAS ^∗2
39.0
mJ
Total power dissipation (Tc=25°C)
PD
150
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed.
∗1 Body Diode
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
0.83
Unit
°C/W
(3)
(1) Gate
(2) Drain
(3) Source
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2009.08 - Rev.B