R6020ANX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

Transistors
10V Drive Nch MOSFET
R6020ANX
R6020ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS)
guaranteed to be r30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zApplications
Switching
zPackaging specifications
Package
Bulk
Code
−
Type Basic ordering unit (pieces)
500
R6020ANX
zAbsolute maximum ratings (Ta=25qC)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
600
Gate-source voltage
VGSS
±30
Drain current
Continuous
ID ^∗3
±20
Pulsed
IDP ^∗1
±80
Source current
(Body Diode)
Continuous
IS ^∗3
20
Pulsed
ISP ^∗1
80
Avalanche Current
IAS ^∗2
10
Avalanche Energy
EAS ^∗2
26.7
Total power dissipation (Tc=25°C)
PD
50
Channel temperature
Tch
150
Range of storage temperature
Tstg
−55 to +150
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
zInner circuit
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
(1)
(1) Gate
(2) Drain
(3) Source
∗1
(2)
(3)
∗1 Body Diode
1/5