R6020ANJ Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R6020ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zPackaging specifications
<LPTS>
Package
Type Code
Basic ordering unit (pieces)
R6020ANJ
Taping
TL
1000
<LPTL>
Package
Type Code
Basic ordering unit (pieces)
R6020ANJ
Taping
TLL
1000
zDimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
1.24
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
LPTL
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
Each lead has same dimensions
8.9
4.8
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
(1) (2) (3)
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
Continuous
ID ^∗3
±20
A
Drain current
Pulsed
IDP ^∗1
±80
A
Source current
Continuous
IS ^∗3
20
A
(Body Diode)
Pulsed
ISP ^∗1
80
A
Avalanche Current
IAS ^∗2
10
A
Avalanche Energy
EAS ^∗2
26.7
mJ
Total power dissipation (Tc=25°C)
PD
100
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
1.25
Unit
°C/W
zInner circuit
∗1
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
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2009.06 - Rev.A