R6018ANX_12 Datasheet, PDF (1/14 Pages) Rohm – Nch 600V 18A Power MOSFET

R6018ANX
Nch 600V 18A Power MOSFET
Datasheet
V_DSS
R_DS(on) (Max.)
I_D
P_D
600V
0.27Ω
18A
50W
Outline
TO-220FM
(1)(2)(3)
Features
1) Low on-resistance.
Inner circuit
2) Fast switching speed.
3) Gate-source voltage (V_GSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packing
Bulk
Reel size (mm)
-
Application
Switching Power Supply
Tape width (mm)
-
Type
Basic ordering unit (pcs)
500
Taping code
-
Marking
R6018ANX
Absolute maximum ratings (T_a = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
T_c = 25°C
T_c = 100°C
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (T_c = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Symbol
V_DSS
I_D ^*1
I_D ^*1
I_D,pulse ^*2
V_GSS
E_AS ^*3
E_AR ^*4
I_AR ^*3
P_D
T_j
T_stg
dv/dt ^*5
Value
600
±18
±8.6
±72
±30
21.6
3.5
9
50
150
−55 to +150
15
Unit
V
A
A
A
V
mJ
mJ
A
W
°C
°C
V/ns
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© 2012 ROHM Co., Ltd. All rights reserved.
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2012.01 - Rev.B