R6018ANX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R6018ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
Applications
Switching
Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
Packaging specifications
Package
Bulk
Type
Basic ordering unit (pieces)
500
R6018ANX
Inner circuit
∗1
(1)
(2)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
Continuous
ID ^∗3
±18
A
Drain current
Pulsed
IDP ^∗1
±72
A
Source current
Continuous
IS ^∗3
18
A
(Body Diode)
Pulsed
ISP ^∗1
72
A
Avalanche current
IAS ^∗2
9
A
Avalanche energy
EAS ^∗2
21.6
mJ
Power dissipation (Tc=25°C)
PD
50
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 L 500μH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed.
∗1 Body Diode
Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
Unit
°C/W
(3)
(1) Gate
(2) Drain
(3) Source
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2011.06 - Rev.A