|
R6015FNX Datasheet, PDF (1/7 Pages) Rohm – 10V Drive Nch MOSFET | |||
|
Data Sheet
10V Drive Nch MOSFET
R6015FNX
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
ã VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
ï¬ Dimensions (Unit : mm)
TO-220FM
10.0
Ï3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
ï¬Application
Switching
ï¬ Inner circuit
ï¬Packaging specifications
Package
Bulk
Type
Code
-
Basic ordering unit (pieces) 500
R6015FNX
ï¡
(1) Gate
(2) Drain
(3) Source
ï¬Absolute maximum ratings (Ta ï½ 25°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25â)
Channel temperature
Range of storage temperature
VDSS
600
V
VGSS
ï±30
V
ID *3
ï±15
A
IDP *1
ï±60
A
IS *3
15
A
ISP *1
60
A
IAS *2
7.5
A
EAS *2
15
mJ
PD
50
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Lâ500ïH, VDD=50V, Rg=25ï, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
ï¬ Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
ï°C / W
â1
(1)
(2)
(3)
ïª1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
|
▷ |