R6015ANZ Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

Data Sheet
10V Drive Nch MOSFET
R6015ANZ
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
 Application
Switching
 Dimensions (Unit : mm)
TO-3PF
15.5
φ3.6
5.5 _3.0
2.0
0.75
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
5.45 5.45
2.0 _3.0
0.9
 Packaging specifications
Package
Bulk
Type _Code
-
Basic ordering unit (pieces) 360
R6015ANZ

 Inner circuit
∗1
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
600
V
V_GSS
30
V
I_D ^*3
15
A
I_DP ^*1
60
A
I_S *3
15
A
I_SP ^*1
60
A
I_AS ^*2
7.5
A
E_AS ^*2
15
mJ
P_D ^*4
110
W
T_ch
150
C
T_stg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, V_DD=50V, R_G=25, T_ch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 T_C=25°C
 Thermal resistance
Parameter
Channel to Case
* T_C=25°C
Symbol
Rth _(ch-c) ^*
Limits
1.13
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
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2011.10 - Rev.A