R6012ANJ Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R6012ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zDimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
(1) Gate
(2) Drain
(3) Source
LPTL
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
Each lead has same dimensions
8.9
4.8
zPackaging specifications
Package
Taping
Type _Code
LPTS
TL
LPTL
TLL
Basic ordering unit (pieces)
1000
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
Continuous
ID ^∗3
±12
A
Drain current
Pulsed
IDP ^∗1
±48
A
Source current
Continuous
IS ^∗3
12
A
(Body Diode)
Pulsed
ISP ^∗1
48
A
Avalanche Current
IAS ^∗2
6
A
Avalanche Energy
EAS ^∗2
9.6
mJ
Total power dissipation (Tc=25°C)
PD
100
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
zInner circuit
∗1
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
1.25
Unit
°C/W
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2009.04 - Rev.A