R6010MND3 Datasheet, PDF (1/14 Pages) Rohm – Nch 600V 10A Power MOSFET

R6010MND3
　　Nch 600V 10A Power MOSFET
　　 ^Datasheet
lOutline
V_DSS
600V
　
R_DS(on)(Max.)
0.380Ω
I_D
±10A
TO-252
P_D
143W
　
　　　　　　
lFeatures
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (V_GSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
16
2500
Taping code
TL
Marking
lAbsolute maximum ratings (T_a = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R6010M
Unit
Drain - Source voltage
V_DSS
600
V
Continuous drain current (T_c = 25°C)
I_D*1
±10
A
Pulsed drain current
I_DP*2
±30
A
Gate - Source voltage
V_GSS
±30
V
Avalanche current, single pulse
I_AS
1.5
A
Avalanche energy, single pulse
E_AS*3
0.6
mJ
Power dissipation (T_c = 25°C)
P_D
143
W
Junction temperature
T_j
150
℃
Operating junction and storage temperature range
T_stg
-55 to +150
℃
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
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