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| R6010ANX Datasheet, PDF (1/7 Pages) Rohm – 10V Drive Nch MOSFET | |||
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Data Sheet
10V Drive Nch MOSFET
R6010ANX
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
ï¬ Dimensions (Unit : mm)
TO-220FM
10.0
Ï3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Bulk
Type Code
-
Basic ordering unit (pieces) 500
R6010ANX
ï¡
ï¬ Inner circuit
â1
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
ï±30
V
Drain current
Continuous
ID *3
ï±10
A
Pulsed
IDP *1
ï±40
A
Source current
(Body Diode)
Continuous
IS *3
10
A
Pulsed
ISP *1
40
A
Avalanche current
IAS *2
5
A
Avalanche energy
EAS *2
6.5
mJ
Power dissipation
PD *4
50
W
Channel temperature
Tch
150
ï°C
Range of storage temperature
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 L 500ïH, VDD=50V, RG=25ï, Starting, Tch=25ï°C
*3 Limited only by maximum temperature allowed.
*4 TC=25ï°C
ï¬ Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
ï°C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ïª1 BODY DIODE
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© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
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