R6008FNX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R6008FNX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Fast reverse recovery time.
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zApplications
Switching
zInner circuit
zPackaging specifications
Package
Bulk
Type
Basic ordering unit (pieces)
500
R6008FNX
∗1
(1)
(2)
∗1 Body Diode
(3)
(1) Gate
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
Continuous
ID ^∗3
±8
A
Drain current
Pulsed
IDP ^∗1
±32
A
Source current
Continuous
IS ^∗3
8
A
(Body Diode)
Pulsed
ISP ^∗1
32
A
Avalanche current
IAS ^∗2
4
A
Avalanche energy
EAS ^∗2
4.3
mJ
Total power dissipation (Tc=25°C)
PD
50
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
Unit
°C/W
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2009.03 - Rev.A