R6006AND Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

Data Sheet
10V Drive Nch MOSFET
R6006AND
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
 Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
(1) Gate
(2) Drain
0.65
0.9 2.3
(1)
(2)
(3) 2.3
0.5
(3) Source
1.0
 Application
Switching
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
R6006AND
Taping
TL
2500

 Inner circuit
∗1
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
600
V
V_GSS
30
V
I_D ^*3
6
A
I_DP ^*1
24
A
I_S ^*3
6
A
I_SP ^*1
24
A
I_AS ^*2
3
A
E_AS ^*2
2.4
mJ
P_D *4
40
W
T_ch
150
C
T_stg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, V_DD=50V, R_G=25, T_ch=25C
*3 Limited only by maximum temperature allowed.
*4 T_C=25C
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
 Thermal resistance
Parameter
Channel to Case
Symbol
R_{th (ch-c)}
Limits
3.13
Unit
C / W
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2011.10 - Rev.A