R5019ANX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R5019ANX
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
Data Sheet
 Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
 Application
Switching
 Packaging specifications
Package
Bulk
Type _Code
-
Basic ordering unit (pieces) 500
R5019ANX

 Inner circuit
∗1
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
500
V
V_GSS
30
V
I_D *3
19
A
I_DP *1
76
A
I_S *3
19
A
I_SP *1
76
A
I_AS *2
9.5
A
E_AS *2
24.3
mJ
P_D *4
50
W
T_ch
150
C
T_stg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, V_DD=50V, R_G=25, T_ch=25C
*3 Limited only by maximum temperature allowed.
*4 T_C=25C
 Thermal resistance
Parameter
Channel to Case
Symbol
R_{th (ch-c)}
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
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2011.10 - Rev.A