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| R5019ANJ Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET | |||
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Data Sheet
10V Drive Nch MOSFET
R5019ANJ
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
ï¬ Dimensions (Unit : mm)
LPTS
10.1
4.5 1.3
(1) Gate
(2) Drain
(3) Source
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R5019ANJ
Taping
TL
1000
ï¡
ï¬ Inner circuit
â1
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
500
V
VGSS
ï±30
V
ID *3
ï±19
A
IDP *1
ï±76
A
IS *3
19
A
ISP *1
76
A
IAS *2
9.5
A
EAS *2
24.3
mJ
PD *4
100
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 L 500ïH, VDD=50V, RG=25ï, Tch=25ï°C
*3 Limited only by maximum temperature allowed.
*4 TC=25ï°C
ï¬ Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
1.25
Unit
ï°C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ïª1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
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