R5016FNJ Datasheet, PDF (1/14 Pages) Rohm – Nch 500V 16A Power MOSFET

R5016FNJ
　　Nch 500V 16A Power MOSFET
　　 ^Datasheet
V_DSS
R_DS(on)(Max.)
I_D
P_D
500V
0.325Ω
±16A
50W
lOutline
LPT(S)
　
　
　　　　　　
　　　　　　
　
　
　
　　　　　　
lFeatures
lInner circuit
1) Fast reverse recovery time (trr).
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (V_GSS) guaranteed to
be ±30V.
5) Drive circuits can be simple.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
lApplication
Switching Power Supply
Type ^{Tape width (mm)}
Basic ordering unit (pcs)
24
1000
Taping code
TL
Marking
R5016FNJ
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (T_c = 25°C)
Junction temperature
Range of storage temperature
T_C = 25°C
T_C = 100°C
V_DSS
500
V
I_D*1
±16
A
I_D*1
±7.6
A
I_D,pulse*2
±64
A
V_GSS
±30
V
E_AS*3
17.1
mJ
E_AR*4
3.5
mJ
I_AR*3
8.0
A
P_D
50
W
T_j
150
℃
T_stg
-55 to +150
℃
Reverse diode dv/dt
dv/dt
15
V/ns
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/13
20140303 - Rev.001 ^{　 　}