R5016ANJ Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R5016ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
LPTS
10.1
4.5 _1.3
1.24
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Source)
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
Each lead has same dimensions
zApplications
Switching
zInner circuit
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
R5016ANJ
Taping
TL
1000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
VGSS
±30
Drain current
Continuous
ID ^∗3
±16
Pulsed
IDP ^∗1
±64
Source current
(Body Diode)
Continuous
IS ^∗3
16
Pulsed
ISP ^∗1
64
Avalanche Current
IAS ^∗2
8
Avalanche Energy
EAS ^∗2
18
Total power dissipation (Tc=25°C)
PD
100
Channel temperature
Tch
150
Range of storage temperature
Tstg
−55 to +150
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
(1)
(1) Gate
(2) Drain
(3) Source
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
∗1
(2)
(3)
∗1 Body Diode
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
1.25
Unit
°C/W
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2009.02 - Rev.A