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R5011FNX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET | |||
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10V Drive Nch MOSFET
R5011FNX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Fast reverse recovery time.
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0
Ï3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
zApplications
Switching
zPackaging specifications
Package
Bulk
Type
Basic ordering unit (pieces)
500
R5011FNX
zInner circuit
â1
(1)
(2)
â1 Body Diode
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
Continuous
ID â3
±11
A
Drain current
Pulsed
IDP â1
±44
A
Source current
Continuous
IS â3
11
A
(Body Diode)
Pulsed
ISP â1
44
A
Avalanche current
IAS â2
5.5
A
Avalanche energy
EAS â2
8.1
mJ
Total power dissipation (Tc=25°C)
PD
50
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
â55 to +150
°C
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 L 500µH, VDD=50V, RG=25â¦, Starting, Tch=25°C
â3 Limited only by maximum temperature allowed
(3)
(1) Gate
(2) Drain
(3) Source
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
Unit
°C/W
www.rohm.com
âc 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.03 - Rev.A
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