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R5011ANJ Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET | |||
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10V Drive Nch MOSFET
R5011ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zDimensions (Unit : mm)
LPTS
10.1
4.5 1.3
(1) Gate
(2) Drain
(3) Source
LPTL
1.24
2.54
0.78
0.4
5.08
2.7
(1) (2) (3)
Each lead has same dimensions
8.9
4.8
zPackaging specifications
Package
Taping
Type Code
LPTS
TL
LPTL
TLL
Basic ordering unit (pieces)
1000
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
Each lead has same dimensions
zInner circuit
â1
(1)
(2)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
500
Gate-source voltage
VGSS
±30
Drain current
Continuous
ID â3
±11
Pulsed
IDP â1
±44
Source current
(Body Diode)
Continuous
IS â3
11
Pulsed
ISP â1
44
Avalanche current
IAS â2
5.5
Avalanche energy
EAS â2
8.1
Total power dissipation (Tc=25°C)
PD
75
Channel temperature
Tch
150
Range of storage temperature
Tstg
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 L 500µH, VDD=50V, RG=25â¦, Starting, Tch=25°C
â3 Limited only by maximum temperature allowed
â55 to +150
â1 Body Diode
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
1.67
Unit
°C/W
www.rohm.com
âc 2009 ROHM Co., Ltd. All rights reserved.
1/5
(3)
(1) Gate
(2) Drain
(3) Source
2009.04 - Rev.A
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