R5009FNX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

Data Sheet
10V Drive Nch MOSFET
R5009FNX
 Structure
Silicon N-channel MOSFET
Features
1)Fast reverse recovery time (t_rr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
　 V_GSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
 Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
 Application
Switching
Inner circuit
 Packaging specifications
Type
Package
Bulk
Basic ordering unit (pieces) 500
R5009FNX

 Absolute maximum ratings (Ta  25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25℃)
Channel temperature
Range of storage temperature
V_DSS
500
V
V_GSS
30
V
I_D ^*3
9
A
I_DP ^*1
36
A
I_S ^*3
9
A
I_SP ^*1
36
A
I_AS ^*2
4.5
A
E_AS ^*2
5.4
mJ
P_D
50
W
Tch
150
C
Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 L 500μH, V_DD=50V, Rg=25,starting Tch=25C
*3 Limited only by maximum temperature allowed.
 Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
∗1
(1) Gate
(2) Drain
(3) Souce
(1)
(2)
(3)
*^{1 Body Diode}
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2011.07 - Rev.A