R5009ANX Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET

10V Drive Nch MOSFET
R5009ANX
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zDimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
zApplications
Switching
zInner circuit
zPackaging specifications
Package
Bulk
Code
−
Type Basic ordering unit (pieces)
500
R5009ANX
(1)
(1) Gate
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
V
Continuous
ID ^∗3
±9
A
Drain current
Pulsed
IDP ^∗1
±36
A
Source current
Continuous
IS ^∗3
9
A
(Body Diode)
Pulsed
ISP ^∗1
36
A
Avalanche Current
IAS ^∗2
4.5
A
Avalanche Energy
EAS ^∗2
5.4
mJ
Total power dissipation (Tc=25°C)
PD
50
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum tempterature allowed
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
2.5
Unit
°C/W
∗1
(2)
(3)
∗1 Body Diode
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2009.02 - Rev.A