|
R4008AND Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET | |||
|
Data Sheet
10V Drive Nch MOSFET
R4008AND
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
ï¬ Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
(1) Gate
0.65
(2) Drain
0.9 2.3
(3) Source
(1)
(2)
(3) 2.3
0.5
1.0
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
R4008AND
Taping
TL
2500
ï¡
ï¬ Inner circuit
â1
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
400
V
VGSS
ï±30
V
ID *4
ï±8
A
IDP
ï±32 *1
A
ï±48 *2
IS *4
8
A
ISP
32 *1
A
48 *2
IAS *3
4
A
EAS *3
4.3
mJ
PD *5
20
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Pwâ¤1ïs, Duty cycleâ¤1% Limited by Safe Operating Area.(VDSâ¤30V)
*3 L 500ïH, VDD=50V, RG=25ï, Tch=25ï°C
*4 Limited only by maximum temperature allowed.
*5 TC=25ï°C
ï¬ Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
6.25
Unit
ï°C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ïª1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.10 - Rev.A
|
▷ |