QSX8 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (30V, 1A)

Transistors
QSX8
General purpose amplification (30V, 1A)
QSX8
zApplication
Low frequency amplifier
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE (sat) 350mV
at Ic= 500mA / IB= 25mA
zExternal dimensions (Unit : mm)
2.8
1.6
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : X08
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
VCEO
30
Emitter-base voltage
VEBO
6
Collector current
IC
1
ICP
2
Power dissipation
500
PC
1.25
0.9
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A
∗1
mW/TOTAL ^∗2
W/TOTAL ^∗3
W/ELEMENT ^∗3
°C
°C
zEquivalent Circuit
(6)
(5)
(4)
(1)
(2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 30 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO
−
− 100 nA VCB=30V
Emitter cutoff current
IEBO
−
− 100 nA VEB=6V
Collector-emitter saturation voltage
DC current gain
Transition frequency
VCE(sat) − 120 350 mV IC/IB=500mA/25mA
hFE 270 − 680 − VCE/IC=2V/100mA
∗
fT
− 320 − MHz VCE=2V, IE=−100mA, f=100MHz ^∗
Collector output capacitance
Cob
−
7 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.A
1/2