QSX7 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (12V, 1.5A)

Transistors
QSX7
General purpose amplification (12V, 1.5A)
QSX7
zApplication
Low frequency amplifier
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) 200mV
At IC = 500mA / IB = 25mA
zExternal dimensions (Unit : mm)
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : X07
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
VCEO
12
Emitter-base voltage
VEBO
6
Collector current
IC
1.5
ICP
3
500
Power dissipation
PC
1.25
0.9
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A
∗1
mW/TOTAL ^∗2
W/TOTAL ^∗3
W/ELEMENT ^∗3
°C
°C
zEquivalent circuit
(6)
(5)
(4)
Tr1
Tr2
(1)
(2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO
−
− 100 nA VCB=15V
Emitter cutoff current
IEBO
−
− 100 nA VEB=6V
Collector-emitter saturation voltage
DC current gain
Transition frequency
VCE(sat)
−
85 200 mV IC/IB=500mA/25mA
hFE 270 − 680 − VCE/IC=2V/200mA
∗
fT
− 400 − MHz VCE=2V, IE=−200mA, f=100MHz ^∗
Collector output capacitance
Cob − 12 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.B
1/2