QSX6 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
QSX6
Low frequency amplifier
QSX6
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) 350mV
At IC = 1A / IB = 50mA
zExternal dimensions (Unit : mm)
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : X06
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
Emitter-base voltage
VCEO
30
VEBO
6
Collector current
IC
1.5
ICP
3
Power dissipation
PC
500
1.25
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
zEquivalent circuit
(6) (5)
(4)
(1) (2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
30
−
−
V IC=10µA
30
−
−
V IC=1mA
6
−
−
V IE=10µA
−
−
100
nA VCB=30V
−
−
100
nA VEB=6V
−
140 350 mV IC=1A, IB=50mA
270
−
680
− VCE=2V, IC=100mA ^∗
−
300
−
MHz VCE=2V, IE=−100mA, f=100MHz ^∗
−
11
−
pF VCB=10V, IE=0A, f=1MHz
Rev.A
1/2