QSX1 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (15V, 6A)

Transistors
QSX1
General purpose amplification (15V, 6A)
QSX1
zApplication
Low frequency amplifier
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE(sat) 200mV
at IC = 3A / IB = 60mA
zExternal dimensions (Unit : mm)
2.8
1.6
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : X01
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
VCEO
12
Emitter-base voltage
VEBO
6
Collector current
IC
6
ICP
10
Power dissipation
PC
500
1.25
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
zEquivalent Circuit
6pin 5pin
4pin
1pin 2pin
3pin
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC=10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC=1mA
Emitter-base breakdown voltage
BVEBO 6
−−
V IE=10µA
Collector cutoff current
ICBO
−
− 100 nA VCB=15V
Emitter cutoff current
IEBO
−
− 100 nA VEB=6V
Collector-emitter saturation voltage VCE (sat) − 80 200 mV IC/IB=3A/60mA
DC current gain
hFE 270 − 680 − VCE/IC=2V/500mA
∗
Transition frequency
fT
− 250 − MHz VCE=2V, IE= −500mA, f=100MHz^∗
Collector output capacitance
Cob − 80 − pF VCB=10V, IE=0A, f=1MHz
∗ Pulsed
Rev.A
1/2