QST6TR Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
QST6
Low frequency amplifier
QST6
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) : max. −180mV
At IC= −1A / IB= −50mA
zExternal dimensions (Unit : mm)
2.8
1.6
Each lead has same dimensions
Abbreviated symbol : T06
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−15
Collector-emitter voltage
Emitter-base voltage
VCEO
−12
VEBO
−6
Collector current
IC
−2
ICP
−4
Power dissipation
500
PC
1.25
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Termminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm×^t 0.8mm ceramic substrate
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
zEquivalent circuit
(6) (5)
(4)
(1) (2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−15
−
−
V IC=−10µA
−12
−
−
V IC=−1mA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−15V
−
−
−100 nA VEB=−6V
−
−120 −180 mV IC=−1A, IB=−50mA
270
−
680
− VCE=−2V, IC=−200mA ^∗
−
360
−
MHz VCE=−2V, IE=200mA, f=100MHz ^∗
−
15
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2