QST3 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (−30V, −5A)

Transistors
QST3
General purpose amplification (−30V, −5A)
QST3
zApplication
Low frequency amplifier
Driver
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ^−250mV
At IC = ^−2A / IB = ^−40mA
zExternal dimensions (Unit : mm)
2.8
1.6
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : T03
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−30
Emitter-base voltage
VEBO
−6
Collector current
IC
−5
ICP
−8
Power dissipation
500
PC
1.25
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A ∗1
mW ∗2
W ∗3
°C
°C
zEquivalent circuit
6pin 5pin
4pin
1pin 2pin
3pin
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−30
−
−
V IC= −10µA
−30
−
−
V IC= −1mA
−6
−
−
V IE= −10µA
−
− −100 nA VCB= −30V
−
− −100 nA VEB= −6V
− −170 −250 mV IC= −2A, IB= −40mA
270
−
680
− VCE= −2V, IC= −500mA
∗
−
200
−
MHz VCE= −2V, IE=500mA, f=100MHz ∗
−
60
−
pF VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2