QST2 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (−12V, −3A)

Transistors
QST2
General purpose amplification (−12V, −3A)
QST2
zApplication
Low frequency amplifier
Driver
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ^−250mV
at IC = ^−3A / IB = ^−60mA
zExternal dimensions (Unit : mm)
2.8
1.6
ROHM : TSMT6
Each lead has same dimensions
Abbreviated symbol : T02
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−15
Collector-emitter voltage
VCEO
−12
Emitter-base voltage
VEBO
−6
Collector current
IC
−6
ICP
−10
Power dissipation
PC
500
1.25
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
zEquivalent circuit
6pin 5pin
4pin
1pin 2pin
3pin
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−15
−
−
V IC= −10µA
−12
−
−
V IC= −1mA
−6
−
−
V IE= −10µA
−
− −100 nA VCB= −15V
−
−
−100 nA VEB= −6V
−
−120 −250 mV IC= −3A, IB= −60mA
270
−
680
− VCE= −2V, IC= −500mA
∗
−
250
−
MHz VCE= −2V, IE=500mA, f=100MHz ^∗
−
80
−
pF VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2