QS8M11 Datasheet, PDF (1/9 Pages) Rohm – 4V Drive Nch + Pch MOSFET

Data Sheet
4V Drive Nch + Pch MOSFET
QS8M11
 Structure
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : M11
 Application
Switching
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8M11
Taping
TR
3000

 Inner circuit
(8)
(7)
(6)
(5)
∗2
∗2
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
Tch
Tstg
30
30
20
20
3.5
3.0
12
12
1.0
1.0
12
12
1.5
1.25
150
55 to +150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 SOURCE
(2) Tr1 GATE
(3) Tr2 SOURCE
(4) Tr2 GATEɹ
(5) Tr2 DRAIN
(6) Tr2 DRAIN
(7) Tr1 DRAIN
(8) Tr1 DRAIN
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2011.02 - Rev.A