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QS8K21 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Nch + Nch MOSFET | |||
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4V Drive Nch + Nch MOSFET
QS8K21
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : K21
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8K21
Taping
TR
3000
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
Is
Isp *1
PD *2
Tch
Tstg
45
ï±20
ï±4
ï±12
1
12
1.5
1.25
150
ï55 to +150
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
ï°C
ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Inner circuit
(8)
(7)
(6)
(5)
â2
â2
â1
â1
(1)
(2)
(3)
(4)
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
83.3
100
Unit
°C / W /TOTAL
°C / W /ELEMENT
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âc 2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.A
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