QS8K2 Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
QS8K2
 Structure
Silicon N-channel MOSFET
Features
1) Low On-resistance.
2) High power package.
3) 2.5V drive.
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
 Application
Switching
Abbreviated symbol : K02
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8K2
Taping
TR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
30
12
3.5
12
1
12
1.5
1.25
Channel temperature
Tch
150
Range of storage temperature
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
 Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board.
Symbol
Rth (ch-a^*)
Limits
83.3
100
Unit
°C / W /TOTAL
°C / W /ELEMENT
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2010.09 - Rev.A