QS8K12 Datasheet, PDF (1/7 Pages) Rohm – 4V Drive Nch + Nch MOSFET

Data Sheet
4V Drive Nch + Nch MOSFET
QS8K12
 Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
 Application
Switching
Abbreviated symbol : K12
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
QS8K12
Taping
TCR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
Power dissipation
P_D ^*2
Channel temperature
Tch
Range of storage temperature
Tstg
Limits
Unit
30
V
20
V
4
A
12
A
1
A
12
A
1.5
W / TOTAL
1.25 W / ELEMENT
150
C
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Inner circuit
I_D=4A,
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
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2011.05 - Rev.A