QS8J4 Datasheet, PDF (1/6 Pages) Rohm – 4V Drive Pch + Pch MOSFET

4V Drive Pch + Pch MOSFET
QS8J4
 Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
 Application
Switching
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
Abbreviated symbol : J04
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8J4
Taping
TR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
30
V_GSS
20
I_D
4
I_DP ^*1
16
I_s
1
I_sp ^*1
16
P_D ^*2
1.5
1.25
Tch
150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
 Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source ^∗2
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗1
(1)
(2)
∗1
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
83.3
100
Unit
°C / W /TOTAL
°C / W /ELEMENT
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2010.04 - Rev.A