QS8J2 Datasheet, PDF (1/6 Pages) Rohm – 1.5V Drive Pch MOSFET

1.5V Drive Pch MOSFET
QS8J2
 Structure
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) High power package.
3) 1.5V drive.
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
(1) (2) (3) (4)
 Application
Switching
Abbreviated symbol : J02
 Packaging specifications
 Inner circuit
Type
QS8J2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
I_DP ^*1
I_s
I_sp ^*1
*2
P_D
12
10

12
1
12
1.5
1.25
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
Tch
150
C
Tstg 55 to +150
C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
83.3
100
Unit
C/ W /TOTAL
C/W/ELEMENT
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2010.09 - Rev.A