QS8J12 Datasheet, PDF (1/7 Pages) Rohm – 1.5V Drive Pch + Pch MOSFET

Data Sheet
1.5V Drive Pch + Pch MOSFET
QS8J12
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
TSMT8
(8) (7) (6) (5)
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive(1.5V drive).
 Application
Switching
(1) (2) (3) (4)
Abbreviated symbol : J12
 Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
QS8J12
Taping
TCR
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
V_GSS
I_D
12
0 to 8
4.5
I_DP ^*1
18
I_s
1
I_sp ^*1
18
P_D *2
1.5
1.25
Tch
150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
C
C
 Inner circuit
(8)
(7)
(6)
(5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
* Mounted on a ceramic board.
Symbol
Rth (ch-a)^*
Limits
83.3
100
Unit
˚C / W /TOTAL
˚C / W /ELEMENT
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2011.05 - Rev.A